Nelaturi Nagendra Reddy | DM TFET Based Biosensor | Best Researcher Award

Published on by Cell Biologist

Dr. Nelaturi Nagendra Reddy | DM TFET Based Biosensor | Best Researcher Award

Dr. Nelaturi Nagendra Reddy | Vignans Foundation for Science Technology and Research Deemed to be University | India

Dr. N. Nagendra Reddy is a dedicated academician and researcher specializing in VLSI and semiconductor device modeling. With a Ph.D. from VIT-AP University, he has consistently contributed to the development of next-generation biosensors, especially using Tunnel FET (TFET) technology. His career reflects a strong trajectory of teaching and research across reputed institutions like VFSTR, SASTRA, and Bapatla Engineering College. Passionate about technological advancements in nanoelectronics, he has authored numerous peer-reviewed SCI-indexed journal papers, book chapters, and conference articles. Dr. Reddy’s patents reflect his innovation in device architecture, aiming to improve biosensor performance. His work bridges theoretical simulation and real-world biomedical applications, marking him as a promising researcher in the semiconductor biosensor domain. With continuous contributions in TFET-based sensors, Dr. Reddy is a strong contender for the Best Researcher Award, exemplifying academic rigor, technical innovation, and future research potential.

Publication Profiles: 

Google Scholar
Scopus
Orcid

Education:

Dr. N. Nagendra Reddy’s academic journey began with a B.Tech in Electronics and Communication Engineering from JNTU Kakinada. He then pursued his M.Tech in VLSI Design at KL University. Driven by a passion for research in nanoscale devices, he completed his Ph.D. VIT-AP University. His doctoral thesis, titled “Simulation and Modeling of TFET-based Biosensor for Label-Free Detection of Biomolecules,” under the guidance of Dr. Deepak Kumar Panda, reflects a strong focus on advanced semiconductor device engineering. His education seamlessly integrates theoretical expertise with practical application, particularly in biosensor design, semiconductor physics, and device simulation. This solid academic foundation has been instrumental in shaping his research in TFET-based biosensors for healthcare and biomedical applications.

Experience:

Dr. Reddy has accumulated a rich and diverse teaching experience. He currently serves as a Senior Assistant Professor at VFSTR Deemed to Be University. Prior to this, he held assistant professor positions at prestigious institutes like SASTRA Deemed University, Bapatla Engineering College, QIS Institute of Technology, and Kallam Haranadh Reddy Institute of Technology. His academic tenure includes delivering advanced courses in VLSI design, nanoelectronics, and semiconductor devices while guiding research-oriented student projects. He has a consistent record of contributing to departmental research output, publications, and mentoring. His teaching experience is complemented by a continuous engagement in high-impact research, making him not just an educator but also a researcher influencing future semiconductor biosensor technologies.

Research Focus:

Dr. Nagendra Reddy’s research primarily focuses on TFET (Tunnel Field Effect Transistor)-based biosensors, aiming at label-free, ultra-sensitive biomolecule detection. His work explores low-power, high-performance devices for biomedical applications using dielectric modulation, novel gate engineering, and material innovations. He has contributed extensively to the simulation and analytical modeling of TFET structures, enhancing device sensitivity, surface potential control, and current characteristics. His research bridges semiconductor device physics and biomedical engineering, targeting next-generation diagnostic solutions. Dr. Reddy has co-authored several peer-reviewed journal papers, conference papers, and book chapters in collaboration with academic experts. He has also filed and published patents introducing novel TFET configurations. His continuous innovation in this area offers substantial promise for early-stage disease diagnostics and non-invasive biosensing applications. His work reflects a strong alignment with the goals of futuristic nano-bio-electronic systems, making him a deserving nominee for the Best Researcher Award.

Publications Top Notes:

  1. Low-bandgap Material Engineering based TFET device for Next-Generation Biosensor Application – A Comprehensive Review – Micro and Nanostructures

  2. GSE and GWE Techniques to improve ON (ION) current and Ambipolar conduction of TFET device – A Comprehensive Review – Micro and Nanostructures

  3. Analytical modeling of DM-DMG-TFET for label-free biosensing – AEU International Journal of Electronics and Communications

  4. Design of Z-shaped gate oxide-stack TFET for label-free biosensor – Journal of Micromechanics and Microengineering

  5. Nanowire gate all-around TFET biosensor with ambipolar transport – Applied Physics A

  6. Performance analysis of Z-shaped gate dielectric modulated TFET for biosensor – Int. Journal of Numerical Modelling

  7. Simulation of dual material gate TFET-based biosensor considering ambipolar conduction – Silicon

  8.  Comprehensive review on TFET-based biosensors – device structure and sensitivity – Silicon

Conclusion:

In conclusion, Dr. N. Nagendra Reddy is an emerging and promising researcher in the domain of semiconductor devices and biosensor technology. His profile reflects a strong foundation in both academic teaching and high-quality research with a clear focus on innovation, intellectual contributions, and societal relevance through healthcare-oriented sensor design. Given his solid track record of SCI publications, patent filings, and conference presentations, he is indeed a strong candidate for the Best Researcher Award. With targeted growth in areas such as international collaboration, research funding, and translational research, Dr. Reddy is poised to make a significant impact in the field of nanoelectronics and bio-sensing technology. This recognition would not only honor his existing achievements but also encourage further excellence and contributions to science and technology in India.

Muhammad Irfan | Cell Structure Analysis | Best Researcher Award

Published on by Cell Biologist

Dr. Muhammad Irfan | Cell Structure Analysis | Best Researcher Award

Dr. Muhammad Irfan , University of sargodha , Pakistan

Dr. Muhammad Irfan, born on April 1, 1983, in Sargodha, is an expert in condensed matter physics with a focus on electronic structure calculations using Density Functional Theory (DFT). He holds a Ph.D. in Physics from the University of Sargodha (2019) and has contributed significantly to the study of electronic, optical, and thermoelectric properties of solid materials. His research is instrumental in optimizing semiconductors used in energy-efficient devices like photovoltaic cells, LEDs, and thermoelectric materials. Dr. Irfan has a wide array of publications in high-impact journals, demonstrating his expertise in material science. With extensive teaching experience and active involvement in research, Dr. Irfan has established himself as a key figure in his field.

Publication Profile:

Scopus

Strengths for the Award:

Dr. Muhammad Irfan has made significant contributions to the field of condensed matter physics, particularly through his work on Density Functional Theory (DFT) simulations. His research has a broad scope, covering material properties such as electronic structure, elasticity, magnetism, and thermoelectrics. His work on optimizing semiconductors for energy-efficient devices like photovoltaics, LEDs, and thermoelectric materials showcases his strong focus on practical applications, contributing to advancements in renewable energy and energy conversion technologies. Dr. Irfan’s extensive publication record in high-impact journals demonstrates his high level of expertise and research capability. His interdisciplinary approach and ability to conduct in-depth simulations make him a strong candidate for the award.

Areas for Improvements:

While Dr. Irfan has an excellent academic background and research experience, expanding his collaborations with international research groups and engaging more in cross-disciplinary research could further enhance the global impact of his work. Additionally, focusing on the development of new experimental techniques or contributing more to patentable technologies would strengthen his standing in the broader scientific community.

Education:

Dr. Irfan’s academic journey began at the University of Sargodha, where he completed his M.Sc. (2006) and M.Phil. (2013) in Physics with top grades. He later earned his Ph.D. in 2019 from the same institution. In addition to his studies in Physics, Dr. Irfan also pursued an M.Ed. (2014) and B.Ed. (2011) from the Allama Iqbal Open University, Islamabad. His commitment to learning is reflected in his strong academic record, with distinctions in all his degrees, and he consistently strives to enhance his knowledge in both teaching and research.

Experience:

Dr. Irfan has diverse teaching experience, serving as an Assistant Professor (visiting) at the University of Lahore and a Research Assistant at Riphah International University. Over the years, he has contributed to various graduate and undergraduate programs, where he specialized in Physics and material science. His teaching approach is grounded in both theoretical and practical applications of condensed matter physics, ensuring that students develop a solid understanding of the subject. Dr. Irfan’s research-driven approach also enhances his teaching, bridging the gap between academia and real-world applications.

Research Focus:

Dr. Irfan’s research primarily focuses on the electronic structure, elasticity, thermoelectric properties, and magnetism of materials using Density Functional Theory (DFT). His work is pivotal in optimizing the properties of semiconductors for advanced applications in energy conversion, photovoltaics, and optoelectronics. He explores the interaction between materials and their interfaces, ensuring efficient charge and heat transfer. By investigating thermoelectric materials with high electrical conductivity and low thermal conductivity, Dr. Irfan aims to improve energy efficiency and sustainability, especially in waste heat recovery and energy conversion technologies.

Publications Top Notes:

  1. Optoelectronic structure and related transport properties of Ag2Sb2O6 and Cd2Sb2O7. 📚
  2. Fermi Surface and Optoelectronic Properties of Pyrochlore Oxide Superconductor (Kos2o6). 📖
  3. Enhanced thermoelectric properties of ASbO3 due to decreased band gap. 🔬
  4. Effects of compressed strain on thermoelectric properties of Cu3SbSe4. ⚡
  5. Structural, electronic, optical, and elastic properties of Ca2Nb2O7 crystals. 🔍
  6. Effect of Coulomb interactions on optoelectronic and magnetic properties of A2V2O7 compounds. 🧪
  7. Thermoelectric features of CaPd3B4O12 perovskites following DFT calculations. 🌍
  8. Doping-induced effects on optical and band structure properties of Sr2Si5N8 phosphors. 💡
  9. Optoelectronic properties of CaO: Eu+2 for energy applications. 🔋
  10. Elastic and optoelectronic properties of CaTa2O6 compounds. 🌟
  11. Doping effects on optical properties of Sr2Si5N8 phosphors: DFT approach. 📊

Conclusion:

Dr. Muhammad Irfan’s exceptional expertise in condensed matter physics, coupled with his consistent academic achievements and dedication to practical applications in renewable energy and materials science, makes him a strong contender for the Research for Best Researcher Award. His contributions have already provided valuable insights into material science, and with ongoing collaborations and innovations, he has the potential to make even greater strides in advancing sustainable technology.